Light emitting display device

ABSTRACT

Disclosed is a light emitting display device which facilitates to improve light-extraction efficiency of pixels, and to maximize light-extraction efficiency of each pixel, wherein the light emitting display device includes a substrate having a first area and a second area, a planarization coating layer prepared on the substrate and configured to have a first curve pattern prepared on the first area, and a second curve pattern prepared on the second area, and an emission device prepared on the first curve pattern and the second curve pattern, wherein a thickness of the planarization coating layer overlapping the first curve pattern is different from a thickness of the planarization coating layer overlapping the second curve pattern, and each of the first curve pattern and the second curve pattern includes a plurality of protruding portions having an aspect ratio of 0.4˜0.6.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.16/023,106, filed Jun. 29, 2018, which claims the benefit of the KoreanPatent Application No. 10-2017-0083811 filed on Jun. 30, 2017, of whichthe full disclosures of these applications are incorporated herein byreference for all purposes.

BACKGROUND Field of the Disclosure

The present disclosure relates to a light emitting display device.

Description of the Background

A light emitting display device is a self-light emitting display device,and may be fabricated at a lightweight and a slim size as it does notneed a separate light source unlike a liquid crystal display device.Also, the light emitting display device is favorable in view of powerconsumption and also is excellent for a response speed, whereby thelight emitting display device has been studied as a display for nextgeneration.

The light emitting display device displays an image in accordance with alight emission of an emission device including an emission layerinterposed between two electrodes. In this case, light generated by thelight emission of the emission device is emitted to the external throughthe electrode and a substrate.

However, some of the light generated from the emission layer of thelight emitting display device is not emitted to the external due to atotal reflection on the interface between the emission layer and theelectrode or the interface between the substrate and an air layer, tothereby lower a light-extraction efficiency. Accordingly, the lowlight-extraction efficiency causes lowering of luminance and increase ofpower consumption in the light emitting display device.

SUMMARY

Accordingly, aspects of the present disclosure are directed to a lightemitting display device that substantially obviates one or more problemsdue to limitations and disadvantages of the related art, and a displayapparatus comprising the same.

An aspect of the present disclosure is directed to provide a lightemitting display device which facilitates to improve a light-extractionefficiency of pixels, and to maximize a light-extraction efficiency ineach of the pixels.

Additional advantages and features of aspects of the disclosure will beset forth in part in the description which follows and in part willbecome apparent to those having ordinary skill in the art uponexamination of the following or may be learned from practice of aspectsof the disclosure. The objectives and other advantages of aspects of thedisclosure may be realized and attained by the structure particularlypointed out in the written description and claims hereof as well as theappended drawings.

To achieve these and other advantages and in accordance with the purposeof aspects of the disclosure, as embodied and broadly described herein,there is provided a light emitting display device that may include asubstrate having a first area and a second area, a planarization coatinglayer prepared on the substrate and configured to have a first curvepattern prepared on the first area, and a second curve pattern preparedon the second area, and an emission device prepared on the first curvepattern and the second curve pattern, wherein a thickness of theplanarization coating layer overlapping the first curve pattern isdifferent from a thickness of the planarization coating layeroverlapping the second curve pattern, and each of the first curvepattern and the second curve pattern includes a plurality of protrudingportions having an aspect ratio of 0.4˜0.6.

It is to be understood that both the foregoing general description andthe following detailed description of aspects of the present disclosureare exemplary and explanatory and are intended to provide furtherexplanation of the disclosure as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of aspects of the disclosure and are incorporated in andconstitute a part of this application, illustrate aspect(s) of thedisclosure and together with the description serve to explain theprinciple of aspects of the disclosure.

In the drawings:

FIG. 1 illustrates a light emitting display device according to theaspect of the present disclosure;

FIG. 2 is an equivalent circuit diagram of a first pixel shown in FIG.1;

FIG. 3 is a cross-sectional view illustrating a structure of each offirst to third pixels shown in FIG. 1;

FIG. 4 is a cross-sectional view illustrating a structure of a fourthpixel shown in FIG. 1;

FIG. 5 is an enlarged view showing ‘A’ portion shown in FIG. 3;

FIG. 6 is a plane view illustrating a plane structure of a first curvepattern shown in FIG. 3;

FIG. 7 is an enlarged view illustrating ‘B’ portion shown in FIG. 4;

FIGS. 8A to 8C illustrate a mask structure for forming first and secondcurve patterns in the light emitting display device according to thepresent disclosure;

FIG. 9 is a cross-sectional view illustrating a structure of first tothird pixels shown in FIG. 1; and

FIG. 10 is a cross-sectional view illustrating a structure of a fourthpixel shown in FIG. 1.

DETAILED DESCRIPTION

Reference will now be made in detail to the exemplary aspects of thepresent disclosure, examples of which are illustrated in theaccompanying drawings. Wherever possible, the same reference numberswill be used throughout the drawings to refer to the same or like parts.Advantages and features of the present disclosure, and implementationmethods thereof will be clarified through following aspects describedwith reference to the accompanying drawings. The present disclosure may,however, be embodied in different forms and should not be construed aslimited to the aspects set forth herein. Rather, these aspects areprovided so that this disclosure will be thorough and complete, and willfully convey the scope of the present disclosure to those skilled in theart. Further, the present disclosure is only defined by scopes ofclaims.

A shape, a size, a ratio, an angle, and a number disclosed in thedrawings for describing aspects of the present disclosure are merely anexample, and thus, the present disclosure is not limited to theillustrated details. Like reference numerals refer to like elementsthroughout. In the following description, when the detailed descriptionof the relevant known function or configuration is determined tounnecessarily obscure the important point of the present disclosure, thedetailed description will be omitted.

In a case where ‘comprise’, ‘have’, and ‘include’ described in thepresent disclosure are used, another part may be added unless ‘only˜’ isused. The terms of a singular form may include plural forms unlessreferred to the contrary.

In construing an element, the element is construed as including an errorregion although there is no explicit description.

In describing a position relationship, for example, when the positionalorder is described as ‘on˜’, ‘above˜’, ‘below˜’, and ‘next˜’, a casewhich is not contact may be included unless ‘just’ or ‘direct’ is used.

In describing a time relationship, for example, when the temporal orderis described as ‘after˜’, ‘subsequent˜’, ‘next˜’, and ‘before˜’ a casewhich is not continuous may be included unless ‘just’ or ‘direct’ isused.

It will be understood that, although the terms “first”, “second”, etc.may be used herein to describe various elements, these elements shouldnot be limited by these terms. These terms are only used to distinguishone element from another. For example, a first element could be termed asecond element, and, similarly, a second element could be termed a firstelement, without departing from the scope of the present disclosure.

Also, it should be understood that the term “at least one” includes allcombinations related with any one item. For example, “at least one amonga first element, a second element and a third element” may include allcombinations of two or more elements selected from the first, second andthird elements as well as each element of the first, second and thirdelements. Also, if it is mentioned that a first element is positioned“on or above” a second element, it should be understood that the firstand second elements may be brought into contact with each other, or athird element may be interposed between the first and second elements.

Features of various aspects of the present disclosure may be partiallyor overall coupled to or combined with each other, and may be variouslyinter-operated with each other and driven technically as those skilledin the art can sufficiently understand. The aspects of the presentdisclosure may be carried out independently from each other, or may becarried out together in co-dependent relationship.

Hereinafter, a light emitting display device according to the aspect ofthe present disclosure will be described in detail with reference to theaccompanying drawings.

FIG. 1 illustrates a light emitting display device according to anaspect of the present disclosure.

Referring to FIG. 1, the light emitting display device according to anaspect of the present disclosure may include a pixel array portion 10, acontrol circuit 30, a data driving circuit 50 and a gate driving circuit70.

The pixel array portion 10 may include a plurality of gate lines (GL)and a plurality of data lines (DL) prepared on a substrate, and aplurality of pixels 12 a, 12 b, 12 c and 12 d formed in respective pixelregions defined by crossing the plurality of gate lines (GL) and theplurality of data lines (DL).

Each of the plurality of pixels 12 a, 12 b, 12 c and 12 d displays animage in accordance with a gate signal supplied from the adjacent gateline (GL) and a data signal supplied from the adjacent data line (DL).Each of the plurality of pixels 12 a, 12 b, 12 c and 12 d includes apixel circuit prepared in the pixel region defined by the gate line (GL)and the data line (DL), and an emission device connected with the pixelcircuit. Each of the pixels 12 a, 12 b, 12 c and 12 d may include atleast two thin film transistors and at least one capacitor. Each of thepixels 12 a, 12 b, 12 c and 12 d may include a self light emittingdevice which emits light in itself so as to display an image inaccordance with the data signal supplied from the pixel circuit. Herein,the self light emitting device may be an organic light emitting device,a quantum dot light emitting device or an inorganic light emittingdevice.

Each of the plurality of pixels 12 a, 12 b, 12 c and 12 d may be definedas a minimum unit area for emitting virtual light, which may beexpressed as a sub pixel. At least four adjacent pixels 12 a, 12 b, 12 cand 12 d may constitute one unit pixel 12 for displaying a color image.According to one aspect, one unit pixel 12 may include the first tofourth pixels 12 a, 12 b, 12 c and 12 d arranged adjacent to each otheralong a length direction of the gate line (GL). According to anotheraspect, one unit pixel 12 may include the first to fourth pixels 12 a,12 b, 12 c and 12 d arranged adjacent to each other along a lengthdirection of the data line (DL). In case of this unit pixel 12, thenumber of gate lines (GL) connected with the gate driving circuit 70having a relatively simplified circuit structure is increased, however,the number of data lines (DL) connected with the data driving circuit 50having a relatively complex circuit structure is decreased. According toanother aspect, one unit pixel 12 may include the first to fourth pixels12 a, 12 b, 12 c and 12 d arranged adjacent to each other along the gateline (GL) and the data line (DL). Herein, the first pixel 12 a may be ared pixel, the second pixel 12 b may be a green pixel, the third pixel12 c may be a blue pixel, and the fourth pixel 12 d may be a whitepixel.

The control circuit 30 generates pixel data for each pixel correspondingto each of the plurality of pixels 12 a, 12 b, 12 c and 12 d on thebasis of data signal. For example, the control circuit 30 extracts whitepixel data based on an image signal, that is, red input data, greeninput data and blue input data of each unit pixel 12, calculates redpixel data, green pixel data and blue pixel data by subtracting whitepixel data from each of the red input data, the green input data and theblue input data, aligns the calculated red pixel data, green pixel data,blue pixel data and white pixel data in accordance with a pixelarrangement structure, and supplies the aligned data to the data drivingcircuit 50.

The control circuit 30 generates a data control signal based on a timingsynchronization signal, and provides the data control signal to the datadriving circuit 50. The control circuit 30 generates a gate controlsignal including a start signal and a plurality of gate clock signals onthe basis of timing synchronization signal, and provides the gatecontrol signal to the gate driving circuit 70.

The data driving circuit 50 is connected with the plurality of datalines (DL) prepared in the pixel array portion 10. The data drivingcircuit 50 receives the data control signal and the pixel data for eachpixel supplied from the control circuit 30, and receives a plurality ofreference gamma voltages supplied from a power source circuit. The datadriving circuit 50 converts the pixel data for each pixel into an analogpixel data signal of an analog type by the use of the data controlsignal and the plurality of reference gamma voltages, and supplies theanalog pixel data signal to the corresponding data line (DL).

The gate driving circuit 70 is connected with the plurality of gatelines (GL) prepared in the pixel array portion 10. The gate drivingcircuit 70 generates the gate signal in accordance with a preset orderbased on the gate control signal supplied from the control circuit 30,and supplies the gate signal to the corresponding gate line (GL).

The gate driving circuit 70 according to one aspect of the presentdisclosure may be integrated with one edge or both edges of thesubstrate in accordance with a manufacturing process of the thin filmtransistor, and may be connected with the plurality of gate lines (GL)by an one-to-one correspondence. The gate driving circuit 70 accordingto one aspect of the present disclosure may be formed in an integratedcircuit, may be provided on the substrate or a flexible circuit film,and may be connected with the plurality of gate lines (GL) by anone-to-one correspondence.

FIG. 2 is an equivalent circuit diagram of the first pixel shown in FIG.1.

Referring to FIG. 2, the first pixel 12 a of the light emitting displaydevice according to the aspect of the present disclosure includes thepixel circuit (PC) and the emission device (ED).

The pixel circuit (PC) is prepared in a circuit area of the pixel regiondefined by the gate line (GL) and the data line (DL), and is connectedwith the adjacent gate line (GL) and data line (DL), and a first drivingpower source (VDD). The pixel circuit (PC) controls a light emission ofthe emission device (ED) in accordance with a data voltage (Vdata)supplied from the data line (DL) in response to a gate-on signal (GS)supplied from the gate line (GL). The pixel circuit (PC) according toone aspect of the present disclosure may include a switching thin filmtransistor (ST), a driving thin film transistor (DT) and a capacitor(Cst).

The switching thin film transistor (ST) may include a gate electrodeconnected with the gate line (GL), a first source/drain electrodeconnected with the data line (DL), and a second source/drain electrodeconnected with a gate electrode of the driving thin film transistor(DT). The switching thin film transistor (ST) is turned-on by thegate-on signal (GS) supplied to the gate line (GL), whereby the datavoltage (Vdata) supplied to the data line (DL) is supplied to the gateelectrode of the driving thin film transistor (DT).

The driving thin film transistor (DT) may include a gate electrodeconnected with the second source/drain electrode of the switching thinfilm transistor (ST), a first source/drain electrode (or drainelectrode) connected with the first driving power source (VDD), and asecond source/drain (or source electrode) connected with the emissiondevice (ED). The driving thin film transistor (DT) is turned-on by agate-source voltage based on the data voltage (Vdata) supplied from theswitching thin film transistor (ST), whereby the driving thin filmtransistor (DT) controls the data signal supplied from the first drivingpower source (VDD) to the emission device (ED).

The capacitor (Cst) is connected between the gate electrode and thesource electrode of the driving thin film transistor (DT). The capacitor(Cst) stores a voltage corresponding to the data voltage (Vdata)supplied to the gate electrode of the driving thin film transistor (DT),and turns on the driving thin film transistor (DT) by the storedvoltage. In this case, the capacitor (Cst) maintains the turn-on stateof the driving thin film transistor (DT) until when the data voltage(Vdata) is supplied to the next frame through the switching thin filmtransistor (ST).

The emission device (ED) is prepared in an emission area of the pixelregion, wherein the emission device (ED) emits light in accordance withthe data signal supplied from the pixel circuit (PC). According to oneaspect of the present disclosure, the emission device (ED) may include afirst electrode connected with the source electrode of the driving thinfilm transistor (DT), a second electrode connected with a second drivingpower source (VSS), and an emission layer prepared between the firstelectrode and the second electrode. Herein, the emission layer mayinclude any one among an organic light emitting layer, an inorganiclight emitting layer and a quantum dot light emitting layer, or mayinclude a deposition structure or combined structure of the organiclight emitting layer (or inorganic light emitting layer) and the quantumdot light emitting layer.

The first pixel 12 a of the light emitting display device according tothe aspect of the present disclosure controls the data signal suppliedto the emission device (ED) in accordance with the gate-source voltageof the driving thin film transistor (DT), and makes the emission device(ED) emit light, to thereby display a predetermined image. In the samemanner, a structure in each of the second to fourth pixels 12 b, 12 cand 12 d is the same as a structure of the first pixel 12 a.

FIG. 3 is a cross-sectional view illustrating a structure of each of thefirst to third pixels shown in FIG. 1. FIG. 4 is a cross-sectional viewillustrating a structure of the fourth pixel shown in FIG. 1.

Referring to FIGS. 3 and 4 in connection with FIG. 1, the light emittingdisplay device according to the present disclosure may include asubstrate 100, a transistor layer, a color filter layer 150, aplanarization coating layer 170 and an emission device (ED).

Generally, the substrate 100 may be formed of a glass material. Thesubstrate 100 may be formed of a transparent plastic material capable ofbeing bent or curved, for example, polyimide material. If using theplastic material, the substrate 100 may be formed of polyimide withgreat thermal resistance, which may be durable at a high temperature,due to a high-temperature deposition process performed on the substrate100. An entire front surface of the substrate 100 may be covered with atleast one buffer layer 110.

The buffer layer 110 prevents materials contained in the substrate 100from being diffused to the transistor layer for the high-temperatureprocess of the manufacturing process for the thin film transistor. Also,the buffer layer 110 prevents water or moisture from being permeatedinto the emission device (ED). The buffer layer 110 may be formed of asilicon oxide or a silicon nitride. Selectively, it is possible to omitthe buffer layer 110.

The substrate 100 may include a display area, and a non-display areasurrounding the display area.

The display area may include a plurality of unit pixel regions having afirst area (A1) and a second area (A2) adjacent to the first area (A1).

The first area (A1) includes first to third sub areas (SA1, SA2, SA3) inwhich the first to third pixels 12 a, 12 b and 12 c are respectivelyprepared. The first pixel 12 a is prepared on the first sub area (SA1),the second pixel 12 b is prepared on the second sub area (SA2), and thethird pixel 12 c is prepared on the third sub area (SA3). Each of thefirst to third sub areas (SA1, SA2, and SA3) includes a circuit area(CA) and an emission area (EA, or opening area).

The second area (A2) includes a fourth sub area (SA4) provided with thefourth pixel 12 d.

Each of the first to fourth sub areas (SA1, SA2, SA3, and SA4) includesa circuit area (CA) and an emission area (EA).

The transistor layer may include the driving thin film transistor (DT)prepared in the circuit area (CA) defined in each of the first to fourthsub areas (SA1, SA2, SA3, and SA4).

The driving thin film transistor (DT) according to one aspect of thepresent disclosure includes an active layer 111, a gate insulating film113, a gate electrode 115, a passivation layer 117, a drain electrode119 d and a source electrode 119 s.

The active layer 111 includes drain and source regions 111 d and 111 s,and a channel region 111 c formed in a driving thin film transistor areaof the circuit area (CA) defined on the substrate 100 or buffer layer110. The active layer 111 may include the drain region 111 d and thesource region 111 s which become conductors by an etching gas of anetching process, and the channel region 111 c which does not become aconductor. In this case, the drain region 111 d and the source region111 s are parallel to each other while the channel region 111 c isinterposed between the drain region 111 d and the source region 111 s.

The active layer 111 according to one aspect of the present disclosuremay be formed of a semiconductor material corresponding to any one amongamorphous silicon, polycrystalline silicon, oxide and organic material,but not limited to these materials. For example, the active layer 111according to the present disclosure may be formed of an oxide materialsuch as zinc oxide, tin oxide, Ga—In—Zn oxide, In—Zn oxide or In—Snoxide, or may be formed of an oxide material doped with ions such as Al,Ni, Cu, Ta, Mo, Zr, V, Hf and Ti.

The gate insulating film 113 is formed on the channel region 111 c ofthe active layer 111. The gate insulating film 113 is not formed on anentire front surface of the buffer layer 110 or the substrate 100including the active layer 111, but formed in an island shape only onthe channel region 111 c of the active layer 111.

The gate electrode 115 is formed on the gate insulating film 113 whilebeing overlapping the channel region 111 c of the active layer 111. Thegate electrode 115 functions as a mask so as to prevent the channelregion of the active layer 111 from being a conductor by the etching gasused for a process of patterning the gate insulating film 113 by the useof etching process. The gate electrode 15 may be formed in asingle-layered structure of one of molybdenum (Mo), aluminum (Al),chrome (Cr), aurum (Au), titanium (Ti), nickel (Ni), neodymium (Nd),copper (Cu), and their alloys, or may be formed in a multi-layeredstructure of one of molybdenum (Mo), aluminum (Al), chrome (Cr), aurum(Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and theiralloys.

The passivation layer 117 is formed on the gate electrode 115, and thedrain region 111 d and the source region 111 s of the active layer 111.That is, the passivation layer 117 is formed on the entire front surfaceof the buffer layer 110 or the substrate 100, to thereby cover the gateelectrode 115, and the drain region 111 d and the source region 111 s ofthe active layer 111. The passivation layer 117 may be formed of aninorganic material such as silicon oxide (SiOx) or silicon nitride(SiNx), or may be formed of an organic material such as benzocyclobuteneor photo-acryl. Selectively, the passivation layer 117 may be expressedby the term such as an insulating interlayer.

The drain electrode 119 d is electrically connected with the drainregion 111 d of the active layer 111 via a first contact hole preparedin the passivation layer 117 overlapping the drain region 111 d of theactive layer 111.

The source electrode 119 s is electrically connected with the sourceregion 111 s of the active layer 111 via a second contact hole preparedin the passivation layer 117 overlapping the source region 111 s of theactive layer 111.

The drain electrode 119 d and the source electrode 119 s may be formedof the same metal materials. For example, each of the drain electrode119 d and the source electrode 119 s may be formed in a single-layeredstructure of any one selected among molybdenum (Mo), aluminum (Al),chrome (Cr), aurum (Au), titanium (Ti), nickel (Ni), neodymium (Nd),copper (Cu), and their alloys, or may be formed in a multi-layeredstructure of one of molybdenum (Mo), aluminum (Al), chrome (Cr), aurum(Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and theiralloys.

Additionally, the circuit area may further include a switching thin filmtransistor and a capacitor.

The switching thin film transistor is identical in structure to thedriving thin film transistor, and the switching thin film transistor isprepared on the circuit area (CA), whereby a detailed description forthe switching thin film transistor will be omitted.

The capacitor is prepared in an overlapping area between the sourceelectrode 119 s and the gate electrode 115 of the driving thin filmtransistor (DT) which overlapping each other under the circumstancesthat the passivation layer 117 is interposed in-between.

Additionally, in case of a transistor prepared in the circuit area (CA),its threshold voltage may be shifted by light. In order to prevent thisphenomenon, the light emitting display device according to the presentdisclosure may further include a light shielding layer 101 preparedunder the active layer 111.

The light shielding layer 101 is prepared between the substrate 100 andthe active layer 111 so that it is possible to block the light which isincident on the active layer 111 through the substrate 100, to therebyprevent or minimize the change of threshold voltage in the transistorcaused by the ambient light. The light shielding layer 101 is covered bythe buffer layer 110. Selectively, the light shielding layer 101 iselectrically connected with the source electrode of the transistor,whereby the light shielding layer 101 may serve as a lower gateelectrode of the corresponding transistor. In this case, it is possibleto prevent or minimize the change of threshold voltage of the transistorin accordance with a bias voltage as well as the characteristic changecaused by the light.

The insulating layer 130 is prepared on the entire area of the substrate100 so as to cover the transistor layer. That is, the insulating layer130 covers the passivation layer 170 and the drain electrode 119 d andthe source electrode 119 s of the driving thin film transistor (DT). Theinsulating layer 130 according to one aspect of the present disclosuremay be formed of an inorganic material such as silicon oxide (SiOx) andsilicon nitride (SiNx). Selectively, the insulating layer 130 may beexpressed by the term such as a passivation layer.

The color filter layer 150 is prepared on the insulating layer 130overlapping the emission area (EA) of the first area (A1). That is, thecolor filter layer 150 is prepared in an island shape on the insulatinglayer 130 overlapping the emission area (EA) in each of the first tothird sub areas (SA1, SA2, and SA3). The color filter layer 150 changeswhite light, which is emitted from the emission device (ED) to thesubstrate 100, into colored light which has a color preset in thecorresponding pixel.

The color filter layer 150 according to one aspect of the presentdisclosure includes a color filter which transmits only the wavelengthof light preset in the corresponding pixel from the white light emittedfrom the emission device (ED) to the substrate 100. For example, thecolor filter layer 150 may include a red color filter prepared on theemission area (EA) of the first sub area (SA1, or first pixel), a greencolor filter prepared on the emission area (EA) of the second sub area(SA2, or second pixel), and a blue color filter prepared on the emissionarea (EA) of the third sub area (SA3, or third pixel).

The color filter layer 150 according to another aspect of the presentdisclosure includes a quantum dot layer having a size capable ofemitting the light preset in the corresponding pixel through the use ofre-emission in accordance with the white light emitted from the emissiondevice (ED) to the substrate 100. In this case, the quantum dot layermay include a quantum dot formed of one of Cds, CdSe, CdTe, ZnS, ZnSe,GaAs, GaP, GaAs—P, Ga—Sb, InAs, InP, InSb, AlAs, AlP or AlSb. Forexample, the quantum dot layer prepared on the emission area (EA) of thefirst sub area (SA1, or first pixel) may include the quantum dot of CdSeor InP, the quantum dot layer prepared on the emission area (EA) of thesecond sub area (SA2, or second pixel) may include the quantum dot ofCdZnSeS, and the quantum dot layer prepared on the emission area (EA) ofthe third sub area (SA3, or third pixel) may include the quantum dot ofZnSe. If the color filter layer 150 is formed of the quantum dot layer,it is possible to realize the light emitting display device with greatcolor realization.

The color filter layer 150 according to another aspect of the presentdisclosure may include a color filter containing a quantum dot.

Meanwhile, the color filter layer 150 is not formed in the second area(A2), that is, the fourth sub area (SA4). That is, the fourth pixel 12 dcorresponds to an additionally-provided white sub pixel so as to improvewhite luminance of the unit pixel 12. Unlike the first to third pixels12 a, 12 b and 12 c, the fourth pixel 12 d does not require the colorfilter layer 150. Thus, the color filter layer 150 is not disposed inthe fourth pixel 12 d.

The planarization coating layer 170 is prepared on the entire area ofthe substrate 100 so as to cover the insulating layer 130 and the colorfilter layer 150. The planarization coating layer 170 has a relativelylarge thickness so that it is possible to provide a planarizationsurface on the substrate 100. The planarization coating layer 170according to one aspect of the present disclosure may be formed of anorganic material such as photo-acryl, benzocyclobutene, polyimide andfluorine resin.

The planarization coating layer 170 according to the present disclosuremay include a flat surface, a first curve pattern 180-1 and a secondcurve pattern 180-2.

The flat surface is prepared on the front surface (or upper surface) 170a of the planarization coating layer 170 for covering the remainingcircuit area (CA) except the emission area (EA) in the first area (A1)and the second area (A2).

The first curve pattern 180-1 is prepared in the first area (A1), thatis, the front surface of the planarization coating layer 170 prepared inthe emission area (EA) of each of the first to third sub areas (SA1,SA2, and SA3).

The first curve pattern 180-1 has a curved (or uneven) pattern in theplanarization coating layer 170 overlapping the emission area (EA) ofthe corresponding pixel so that it is possible to change a travelingpath of the light emitted from the emission device (ED), to therebyimprove light-extraction efficiency of the pixel. In this case, thefirst curve pattern 180-1 is prepared to cover the color filter layer150 so that a thickness of the planarization coating layer 170overlapping the first curve pattern 180-1 is relatively smaller than athickness of the planarization coating layer 170 overlapping the circuitarea (CA).

The first curve pattern 180-1 according to one aspect of the presentdisclosure includes a plurality of first protruding portions 181 and aplurality of first recess portions 183 prepared between the emissiondevice (ED) and the color filter layer 150.

Each of the plurality of first protruding portions 181 is prepared inthe planarization coating layer 170 on the emission area (EA)overlapping the color filter layer 150. The plurality of firstprotruding portions 181 change the traveling path of the light emittedfrom the emission device (ED) toward the substrate 100 so that it ispossible to improve light-extraction efficiency of the light emittedfrom the emission device (ED) prepared in the corresponding pixel. Tothis end, the plurality of first protruding portions 181 may have theaspect ratio of 0.4 to 0.6. Herein, the aspect ratio in the plurality ofprotruding portions 181 indicates the ratio of half-width (or radius) tothe height (H1) in the plurality of protruding portions 181. Theplurality of first protruding portions 181 will be described in detaillater.

Each of the plurality of first recess portions 183 is prepared in thefront surface 170 a of the planarization coating layer 170. That is,each of the plurality of first recess portions 183 may be providedbetween the plurality of first protruding portions 181 or may besurrounded by the plurality of first protruding portions 181. Withrespect to the front surface 170 a of the planarization coating layer170, the plurality of first recess portions 183 may have the same depth.However, some among the plurality of first recess portions 183 may havethe different depths due to a manufacturing error for a process ofpatterning the first curve pattern 180-1.

A bottom surface (or lowermost surface) in each of the plurality offirst recess portions 183 is provided at a predetermined interval fromthe color filter layer 150. In order to prevent the front surface of thecolor filter layer 150 from being directly exposed to the first recessportion 183 by the depth of the first recess portion 183, a minimumdistance between the bottom surface of the first recess portion 183 andthe color filter layer 150 is set within a range of 0.1 to 3 micrometer(μm). In this case, the planarization coating layer 170 prepared betweenthe color filter layer 150 and the bottom surface of the first recessportion 183 has the thickness of 0.1 to 3 micrometer (μm).

The second curve pattern 180-2 is prepared in the second area (A2), thatis, the front surface of the planarization coating layer 170 prepared inthe emission area (EA) of the fourth sub area (SA4).

The second curve pattern 180-2 has a curved (or uneven) pattern in theplanarization coating layer 170 overlapping the emission area (EA) ofthe fourth pixel so that it is possible to change a traveling path ofthe light emitted from the emission device (ED), to thereby improvelight-extraction efficiency of the pixel. In this case, the second curvepattern 180-2 is prepared to cover the insulating layer 130 overlappingthe emission area (EA) of the fourth sub area (SA4) so that thethickness of the planarization coating layer 170 overlapping the secondcurve pattern 180-2 is relatively larger than the thickness of theplanarization coating layer 170 overlapping the first curve pattern180-1 of the first area (A1). Accordingly, the thickness of theplanarization coating layer 170 prepared between the color filter layer150 and the bottom surface of the first curve pattern 180-1 may besmaller than the thickness of the planarization coating layer 170prepared between the substrate 100 and the bottom surface of the secondcurve pattern 180-2.

The second curve pattern 180-2 according to one aspect of the presentdisclosure includes a plurality of second protruding portions 185 and aplurality of second recess portions 187.

Each of the plurality of second protruding portions 185 is prepared inthe planarization coating layer 170 on the emission area (EA)overlapping the fourth sub area (SA4). The plurality of secondprotruding portions 185 change the traveling path of the light emittedfrom the emission device (ED) toward the substrate 100 so that it ispossible to improve light-extraction efficiency of the light emittedfrom the emission device (ED) prepared in the fourth pixel. Each of theplurality of second protruding portions 185 may be identical in shape toeach of the plurality of first protruding portions 181 prepared in thefirst area (A1). Within a manufacturing error for a patterning process,each of the plurality of second protruding portions 185 may be differentin shape from each of the plurality of first protruding portions 181prepared in the first area (A1). In detail, the plurality of secondprotruding portions 185 may have the aspect ratio of 0.4 to 0.6. Theplurality of second protruding portions 185 will be described in detaillater.

Each of the plurality of second recess portions 187 is formed in therecess shape from the front surface 170 a of the planarization coatinglayer 170. That is, each of the plurality of second recess portions 187may be provided between the plurality of second protruding portions 185or may be surrounded by the plurality of second protruding portions 185.With respect to the front surface 170 a of the planarization coatinglayer 170, the plurality of second recess portions 187 may have the samedepth. However, some among the plurality of second recess portions 187may have the different depths due to a manufacturing error for a processof patterning the second curve pattern 180-2.

The emission device (ED) emits the light toward the substrate 100 inaccordance with a bottom emission type. The emission device (ED)according to one aspect of the present disclosure includes a firstelectrode (E1), an emission layer (EL) and a second electrode (E2).

The first electrode (E1) is formed in an island shape on the first curvepattern 180-1 prepared in the emission area (EA) of each sub area (SA1,SA2, SA3, and SA4), and is electrically connected with the sourceelectrode 119 s of the driving thin film transistor (DT). In this case,one end of the first electrode (E1) adjacent to the circuit area (CA)extends to the source electrode 119 s of the driving thin filmtransistor (DT), and then is electrically connected with the sourceelectrode 119 s of the driving thin film transistor (DT) via a contacthole (CH) prepared in the planarization coating layer 170 and theinsulating layer 130. As the first electrode (E1) is in the directcontact with the first curve pattern 180-1, the first electrode (E1)includes the curve pattern having the shape in accordance with the shapeof the first curve pattern 180-1.

The first electrode (E1) may be an anode electrode of the emissiondevice (ED). The first electrode (E1) according to one aspect of thepresent disclosure may be formed of transparent conductive oxide (TCO)capable of transmitting the light which is emitted from the emissionlayer (EL) to the substrate 100, for example, indium tin oxide (ITO) orindium zinc oxide (IZO).

The emission layer (EL) is formed in the entire area of the first area(A1) and the second area (A2), and is electrically connected with thefirst electrode (E1). In this case, as the emission layer (EL)overlapping the emission area (EA) of each sub area (SA1, SA2, SA3, andSA4) is in the direct contact with the front surface of the firstelectrode (E1), the emission layer (EL) includes the curve patternhaving the shape in accordance with the shape of the front surface inthe first electrode (E1). Thus, the emission layer (EL) overlapping theemission area (EA) of each sub area (SA1, SA2, SA3, SA4) includes thecurve pattern having the shape in accordance with the shape of the firstcurve pattern 180-1.

The emission layer (EL) according to one aspect of the presentdisclosure includes two or more emission portions for emitting whitelight. For example, the emission layer (EL) may include first and secondemission portions for emitting white light by mixing first light andsecond light together. Herein, the first emission portion is provided toemit the first light, wherein the first emission portion may be any oneamong blue, green, red, yellow and yellowish green emission portions.The second emission portion may include an emission portion for emittinglight whose color is complementary to that of the first light among theblue, green, red, yellow and yellowish green colors.

The second electrode (E2) is formed on the emission layer (EL), and iselectrically connected with the emission layer (EL). In this case, asthe second electrode (E2) overlapping the emission area (EA) of each subarea (SA1, SA2, SA3, and SA4) is in the direct contact with the frontsurface of the emission layer (EL), the second electrode (E2) includesthe curve pattern having the shape in accordance with the shape of thefront surface in the emission layer (EL). Thus, the second electrode(E2) overlapping the emission area (EA) of each sub area (SA1, SA2, SA3,and SA4) includes the curve pattern having the shape in accordance withthe shape of the first curve pattern 180-1.

The second electrode (E2) according to one aspect of the presentdisclosure may be a cathode electrode of the emission device (ED). Thesecond electrode (E2) according to one aspect of the present disclosuremay include a metal material with high reflectance so as to reflect thelight, which is emitted from the emission layer (EL), to the substrate100. For example, the second electrode (E2) may be formed in amulti-layered structure, for example, a deposition structure (Ti/Al/Ti)of aluminum and titanium, a deposition structure (ITO/Al/ITO) ofaluminum and ITO, APC alloy (Ag/Pd/Cu) or a deposition structure(ITO/APC/ITO) of APC alloy and ITO, or may be formed in a single-layeredstructure of any one material or an alloy of two or more materials fromone of argentums (Ag), aluminum (Al), molybdenum (Mo), aurum (Au),magnesium (Mg), calcium (Ca) or barium (Ba).

The emission device (ED) emits white light by the light emission of theemission layer (EL) in accordance with the data signal supplied to thefirst electrode (E1). In this case, the emission device (ED) provided onthe emission area (EA) has the shape corresponding to the shape of thecurve pattern 180-1 and 180-2. Thus, in case of the light which isincident less than a total-reflection critical angle in the white lightwhich is incident on the interfacial surface between the first electrode(E1) and the curve pattern 180-1 and 180-2, it is intactly extractedtoward the substrate 100. Meanwhile, in case of the light which isincident more than the total-reflection critical angle, its travelingpath is changed by the protruding portion 181 and 185 and the recessportion 183 and 187 of the curve pattern 180-1 and 180-2, whereby thelight is extracted toward the substrate 100. Accordingly, it is possibleto improve the light extraction efficiency in each pixel.

The light emitting display device according to the present disclosuremay further include a bank layer 190 and an encapsulation layer 200.

The bank layer 190 is provided to define the emission area (EA) of eachsub area (SA1, SA2, SA3, and SA4) prepared in the first area (A1) andthe second area (A2). The bank layer 190 covers the planarizationcoating layer 170 and the edge of the first electrode (E1) prepared onthe circuit area (CA) except the emission area (EA) in each sub area(SA1, SA2, SA3, and SA4). The bank layer 190 may be formed of an organicmaterial, for example, benzocyclobutene-based resin, acryl-based resinor polyimide-based resin. The bank layer 190 may be formed of aphotosensitive material including a black-colored pigment. In this case,the bank layer 190 functions as a light shielding member.

Each of the second electrode (E2) and the emission layer (EL) of theemission device (ED) is formed on the bank layer 190. That is, theemission layer (EL) is formed on the entire area of the substrate 100provided with the first electrode (E1) and the bank layer 190, and thesecond electrode (E2) is provided to cover the emission layer (EL).

The encapsulation layer 200 is formed on the substrate 100 so as tocover the second electrode (E2), that is, the entire pixels. Theencapsulation layer 200 protects the thin film transistor and theemission device (ED) from an external shock, and also prevents moisturefrom being permeated into the light emitting display device.

Selectively, the encapsulation layer 200 may be formed of a fillingmaterial for surrounding the entire pixels. In this case, the lightemitting display device according to the present disclosure may furtherinclude an encapsulation substrate 300 attached to the substrate 100 bythe use of filling material. The encapsulation substrate 300 may beformed of a metal material.

Additionally, the light emitting display device according to the presentdisclosure may further include a polarizing film attached to the rearsurface (or light-extraction surface) of the substrate 100. Thepolarizing film changes the external light, which is reflected by thethin film transistor and/or lines prepared in the pixel, into acircularly-polarized state, to thereby improve visibility and contrastratio of the light emitting display device.

The light emitting display device according to the present disclosureincludes the curve pattern 180-1 and 180-2 prepared in the planarizationcoating layer 170 overlapping the emission area (EA) of each pixel 12 a,12 b 12 c and 12 d so that the traveling path of the light emitted fromthe emission device (ED) is changed by the curve pattern 180-1 and180-2, thereby improving the light-extraction efficiency of each pixel12 a, 12 b, 12 c and 12 d, and furthermore, realizing improved luminanceand reduced power consumption. Also, the light emitting display deviceaccording to the present disclosure includes the curve pattern 180-1 and180-2 prepared in the planarization coating layer 170 overlapping theemission area (EA) of each pixel 12 a, 12 b, 12 c and 12 d, wherein thecurve pattern 180-1 and 180-2 includes the plurality of protrudingportion 181 and 185 which have the same shape or have the aspect ratioof 0.4 to 0.6, to thereby maximize the light-extraction efficiency ofeach pixel 12 a, 12 b, 12 c and 12 d.

FIG. 5 is an enlarged view showing ‘A’ portion shown in FIG. 3, whichillustrates a cross sectional structure of the emission device and thefirst curve pattern according to one aspect of the present disclosure.FIG. 6 is a plane view illustrating a plane structure of the first curvepattern shown in FIG. 3.

Referring to FIGS. 5 and 6 in connection with FIG. 3, the first curvepattern 180-1 according to one aspect of the present disclosure includesthe plurality of first protruding portions 181 and the plurality offirst recess portions 183.

Each of the plurality of first protruding portions 181 may be formed inthe protruding shape on the color filter layer 150. Accordingly, theplurality of first protruding portions 181 may have the cross sectionalstructure of convex lens or micro lens shape. The plurality of firstprotruding portions 181 change the traveling path of the incident lightwhich is emitted from the emission device (ED) to the substrate 100, tothereby improve the light-extraction efficiency of the pixel.

The plurality of first protruding portions 181 may be disposed in ahexagonal band type on the plane. In this disclosure, the plurality offirst protruding portions 181 may be disposed in various shapes, forexample, a circle band shape, an oval band shape or a polygonal bandshape on the plane.

Each of the plurality of first protruding portions 181 has a crosssectional area which is parallel to the color filter layer 150. Thecross sectional area in each of the plurality of first protrudingportions 181 is gradually increased as being close to the color filterlayer 150 so as to improve the light-extraction efficiency of the pixelby changing the traveling path of the incident light.

Each of the plurality of first protruding portions 181 according to oneaspect of the present disclosure may include a bottom portion 181 a, anapex portion 181 b and a lateral (side) portion 181 c.

The bottom portion 181 a may be defined as the bottom surface of thefirst protruding portion 181 which is adjacent to the color filter layer150. That is, the bottom portion 181 a may be provided at an interval of0.1 to 0.3 micrometer from the front surface of the color filter layer150. That is, the bottom portion 181 a may be the front surface of theplanarization coating layer 170 prepared between the first curve pattern180-1 and the color filter layer 150.

The diameter (D1, or width) of the bottom portion 181 a may be set inaccordance with the aspect ratio of the first protruding portion 181 onthe basis of bottom diameter and height (H1) of the first protrudingportion 181 within a size range which is relatively larger than the apexportion 181 b.

The adjacent bottom portions 181 a of the first protruding portions 181are connected with each other so that it is possible to form the firstrecess portion 183, that is, bottom surface 183 a of the first recessportion 183. In this case, a pitch (P1) between the adjacent firstprotruding portions 181 may be set to be identical to the diameter (D1,or width) of the bottom portion 181 a.

The apex portion 181 b is provided at a predetermined height from thebottom portion 181 a. The apex portion 181 b may be defined as the apexof the first protruding portion 181 having the protruding shape. In thiscase, the apex portion 181 b may be disposed in the front surface 170 aof the planarization coating layer 170 or under the front surface 170 aof the planarization coating layer 170.

The lateral portion 181 c is prepared between the bottom portion 181 aand the apex portion 181 b.

The lateral portion 181 c according to one aspect of the presentdisclosure may be provided in the curved-line shape between the bottomportion 181 a and the apex portion 181 b so as to improve thelight-extraction efficiency of the pixel by changing the traveling pathof the incident light. In this case, the lateral portion 181 c may havethe curve-line shape including an inflection point (IP) so as tomaximize the light-extraction efficiency of the pixel. In this case, thelateral portion 181 c according to the present disclosure may include aninflection point portion (IPP) having the inflection point (IP), a firstcurved-line portion (CP1) prepared between the inflection point portion(IPP) and the bottom portion 181 a, and a second curved-line portion(CP2) prepared between the inflection point portion (IPP) and the apexportion 181 b.

The inflection point portion (IPP) includes a recess surface preparedbetween the inflection point (IP) and the first curved-line portion(CP1), and a protruding surface prepared between the inflection point(IP) and the second curved-line portion (CP2). Accordingly, thetraveling path of the light which is incident on the inflection pointportion (IPP) may be changed to various angles by the use of recesssurface and protruding surface, to thereby improve the light-extractionefficiency of the pixel.

The first curved-line portion (CP1) may be provided in the recess shapewhile being disposed between the inflection point portion (IPP) and thebottom portion 181 a. The second curved-line portion (CP2) may beprovided in the protruding shape while being disposed between theinflection point portion (IPP) and the apex portion 181 b.

With respect to the height (H1) of the first protruding portion 181, aratio of the height (h1) of the first curved-line portion (CP1), theheight (h2) of the inflection point portion (IPP) and the height (h3) ofthe second curved-line portion (CP2) may be set to 1:3:1, but notlimited thereto. Each of the height (h1) of the first curved-lineportion (CP1) and the height (h3) of the second curved-line portion(CP2) may be the same as or different from each other within a rangewhich is lower than the height (h2) of the inflection point portion(IPP). Also, with respect to the length of the lateral portion 181 c,the curved-line length of the inflection point portion (IPP) may belarger than the length of each of the first curved-line portion (CP1)and the second curved-line portion (CP2), and each length of the firstcurved-line portion (CP1) and the second curved-line portion (CP2) maybe the same as or different from each other. In this case, the length ofthe second curved-line portion (CP2) may be larger than the length ofthe first curved-line portion (CP1). The height or curved-line length ineach of the first curved-line portion (CP1), the inflection pointportion (IPP) and the second curved-line portion (CP2) may be set inaccordance with the aspect ratio of the first protruding portion 181which is set so as to improve the light-extraction efficiency inaccordance with the change of light traveling path.

The inflection point portion (IPP), the first curved-line portion (CP1)and the second curved-line portion (CP2) in the lateral portion 181 caccording to one aspect of the present disclosure may have a symmetricstructure with respect to the apex portion 181 b so that the protrudingportions 181 according to one aspect of the present disclosure may havea cross sectional structure of bell or Gaussian curve.

The plurality of first recess portions 183 are prepared at fixedintervals while being prepared in the recess shape from the frontsurface 170 a of the planarization coating layer 170. That is, each ofthe first recess portions 183 may be prepared in the first protrudingportion 181 having the hexagonal band shape on the plane. Accordingly,the first protruding portions 181 and the first recess portions 183prepared on the emission area (EA) may have a honeycomb structure of ahexagonal shape on the plane.

The plurality of first recess portions 183 are disposed at fixedintervals while being parallel in a first direction, and are provided asa zigzag type in a second direction. That is, the plurality of firstrecess portions 183 may be disposed at fixed intervals while beingprovided in a lattice configuration, however, the first recess portions183 which are adjacent in the first direction may be disposedalternately in the second direction. Accordingly, the respective centersof the adjacent three recess portions 183 may form a triangular shape(TS).

With respect to the front surface 170 a of the planarization coatinglayer 170, the plurality of first recess portions 183 may have the samedepth. However, some among the plurality of first recess portions 183may have the different depths due to a manufacturing error for apatterning process.

The bottom surface (or lowermost surface) in each of the plurality offirst recess portions 183 is provided at a predetermined interval fromthe color filter layer 150. That is, the bottom surface 183 a of thefirst recess portion 183 confronts the front surface 150 a of the colorfilter layer 150 under the circumstances that the planarization coatinglayer 170 is disposed in-between. In this case, the planarizationcoating layer 170 prepared between the bottom surface of the firstrecess portion 183 and the color filter layer 150 has a thickness morethan 0.1 micrometer (μm) so as to prevent some of the front surface ofthe color filter layer 150 from being directly exposed to the firstrecess portion 183 for a process of forming the first recess portion183. Herein, as the planarization coating layer 170 prepared between thecolor filter layer 150 and the first recess portions 183 for a processof forming the first recess portions 183 is increased in its thickness,it is possible to prevent some of the front surface 150 a of the colorfilter layer 150 from being directly exposed to the first recess portion183 with high efficiency. However, in aspect of the manufacturingprocess, a material cost of the planarization coating layer 170 isincreased, a manufacturing time is increased, and a thickness of thelight emitting display device is also increased. Thus, in order toprevent the front surface of the color filter layer 150 from beingdirectly exposed to the first recess portion 183 by the depth of thefirst recess portion 183, and also to minimize the increase of thematerial cost in the planarization coating layer 170, the increase ofmanufacturing time, and the increase of the thickness in the lightemitting display device, a maximum thickness of the planarizationcoating layer 170 prepared between the color filter layer 150 and thebottom surface of the first recess portion 183 is set to be less than 3micrometer (μm). Accordingly, a minimum distance between the frontsurface 150 a of the color filter layer 150 and the plurality of firstrecess portions 183 may be 0.1 micrometer (μm), and a maximum distancebetween the front surface 150 a of the color filter layer 150 and theplurality of first recess portions 183 may be 3 micrometer (μm).

If the minimum distance between the color filter layer 150 and the firstrecess portions 183 is less than 0.1 micrometer (μm), some of the frontsurface of the color filter layer 150 may be removed and recessed forthe patterning process of the planarization coating layer 170 so as toform the first curve pattern 180-1, or some of the front surface of thecolor filter layer 150 may be directly exposed to the first recessportion 183. If the color filter layer 150 is exposed to the firstrecess portion 183 without being covered by the planarization coatinglayer 170, dark spots may be generated in the recess area of the colorfilter layer 150. Thus, moisture may spread to the emission device (ED)due to moisture by outgassing of the color filter layer 150, to therebydeteriorate the characteristics of the emission device (ED), andreliability and lifespan of the emission device (ED). Also, the firstelectrode (E1) of the emission device (ED) is in the direct contact withthe color filter layer 150, whereby the first electrode (E1) isdeteriorated, and the color filter layer 150 is damaged due to thedeterioration of the first electrode (E1). If the color filter layer 150is exposed to the first recess portion 183 without being covered by theplanarization coating layer 170, the characteristics of the emissiondevice (ED), and reliability and lifespan of the emission device (ED)may be deteriorated. In order to overcome these problems, the thickness(T1) of the planarization coating layer 170 prepared between the frontsurface 150 a of the color filter layer 150 and the bottom surface 183 aof each of the plurality of first recess portions 183 is set within arange of 0.1 to 3 micrometer (μm).

The emission device (ED) according to one aspect of the presentdisclosure includes the first electrode (E1), the emission layer (EL)and the second electrode (E2) sequentially deposited on the first curvepattern 180-1. The emission device (ED) may have the shape correspondingto the shape of the first protruding portions 181 and the first recessportions 183 prepared in the first curve pattern 180-1. Accordingly, thetraveling path of the light emitted from the emission device (ED) ischanged to the substrate 100 by the use of first curve pattern 180-1, tothereby improve the light-extraction efficiency.

The thickness of the emission device (ED) according to the presentdisclosure may be changed in accordance with its location in the firstprotruding portion 181 and the first recess portion 183. In detail, fora process of forming the emission device (ED) by a deposition method, adeposition material for the emission device (ED), which hasstraightness, is deposited on the first curve pattern 180-1 instead of aflat surface. Thus, the emission device (ED) may have the differentthicknesses (t1, t2, t3) in the apex portion 181 b of the firstprotruding portion 181, the inflection point portion (IPP), and thefirst recess portion 183. That is, each of the apex portion 181 b of thefirst protruding portion 181 and the bottom surface 183 a of the firstrecess portion 183 may have a large curvature with respect to theinflection point portion (IPP) of the first protruding portion 181, ormay have a small inclination with respect to the bottom surface 181 a ofthe first protruding portion 181. Accordingly, the emission device (ED)may have the first thickness (t1) on the bottom surface 183 a of thefirst recess portion 183, may be the second thickness (t2) on the apexportion 181 b of the first protruding portion 181, wherein the secondthickness (t2) may be the same as or different from the first thickness(t1), and may have the third thickness (t3) on the inflection pointportion (IPP) of the first protruding portion 181, wherein the thirdthickness (t3) may be smaller than each of the first thickness (t1) andthe second thickness (t2).

If the emission layer (EL) of the emission device (ED) is formed of anorganic light emitting layer, the light emission of the emission layer(EL) is generally generated in the area with high current density. Incase of the emission device (ED) according to the present disclosure, arelatively-strong main emission is generated in the emission layer (EL)on the inflection point portion (IPP) of the first protruding portion181 having the relatively-small third thickness (t3), a first subemission which is weaker than the main emission is generated in theemission layer (EL) on the bottom surface 183 a of the first recessportion 183 having the first thickness (t1) which is relatively largerthan the third thickness (t3), and a second sub emission which is weakerthan the main emission is generated in the emission layer (EL) on theapex portion 181 b of the first protruding portion 181 having the secondthickness (t2) which is relatively larger than the third thickness (t3).According to the shape of the first curve pattern 180-1, the mainemission area may be defined as a main light-extraction area, and thesub emission area may be defined as a sub light-extraction area. Thus,in case of luminance on the first curve pattern 180-1, while theluminance is relatively high in the area overlapping the inflectionpoint portion (IPP) of the first protruding portion 181, the luminanceis relatively low in the area overlapping the bottom surface 183 a ofthe first recess portion 183.

In consideration of the thickness of the emission device (ED) formed inaccordance with the shape of the first curve pattern 180-1, the apexportion 181 b of the first protruding portion 181 corresponds to the subemission area, which has the high light-extraction efficiency and lowcurrent density. The bottom surface 183 a of the first recess portion183 corresponds to the sub emission area, which has the lowestlight-extraction efficiency and the lowest current density. Meanwhile,the inflection point portion (IPP) of the first protruding portion 181corresponds to the main emission area, which has the highlight-extraction efficiency and high current density. Accordingly, withrespect to an emission amount of the emission device (ED) for each unitarea, the inflection point portion (IPP) of the first protruding portion181 has the largest emission amount, the bottom surface 183 a of thefirst recess portion 183 has the smallest emission amount, and theemission amount on the apex portion 181 b of the first protrudingportion 181 may be the same as or larger than the emission amount on thebottom surface 183 a of the first recess portion 183. Accordingly, incase of the lateral portion 181 c of the first protruding portion 181,the light-extraction efficiency may be increased in accordance with theincrease of an occupying percentage of the inflection point portion(IPP), and the power consumption may be reduced in accordance with thedecrease of an occupying percentage of the first curved-line portion(CP1). With respect to the height (H1) of the first protruding portion181, a ratio of the height (h1) of the first curved-line portion (CP1),the height (h2) of the inflection point portion (IPP) and the height(h3) of the second curved-line portion (CP2) may be set to 1:3:1, tothereby improve the light-extraction efficiency.

The first curve pattern 180-1 according to one aspect of the presentdisclosure may be manufactured by a photolithography process. Forexample, the process of forming the first curve pattern 180-1 mayinclude steps of coating photoresist at a constant thickness onto theplanarization coating layer 170, patterning the curve shape in theplanarization coating layer 170 by photolithography, and forming thefirst curve pattern 180-1 having the plurality of first protrudingportions 181 and the plurality of first recess portions 183. An exposuremask used for the photolithography process includes a plurality of lighttransmitting parts and a plurality of light blocking parts in accordancewith the first curve pattern 180-1. In this case, the shape in each ofthe plurality of light transmitting parts is set within a range capableof preventing the exposure of the color filter layer 150 on the basis ofthe thickness of the planarization coating layer 170 on the color filterlayer 150, the exposure amount, the diameter of the first protrudingportion 181, and the pitch between the first protruding portions 181.

The first curve pattern 180-1 according to another aspect of the presentdisclosure may be manufactured by a photolithography process and aheat-treatment process. For example, the process of forming the firstcurve pattern 180-1 may include steps of coating photoresist at aconstant thickness onto the planarization coating layer 170, patterningthe curve shape in the planarization coating layer 170 byphotolithography, forming the first curve pattern 180-1 having theplurality of first protruding portions 181 and the plurality of firstrecess portions 183, and realizing the optimal shape of the firstprotruding portions 181 by the heat-treatment process. In this case, theheat-treatment process is carried out by at least two steps instead ofone step. For example, the heat-treatment process may include a firstheat-treatment process using a first heat-treatment temperature, and asecond heat-treatment process using a second heat-treatment temperaturewhich is relatively higher than the first heat-treatment temperature.Herein, the shape of the first protruding portions 181 may be determinedby controlling the process time and the first heat-treatment temperatureof the first heat-treatment process.

The light-extraction efficiency in accordance with the shape of thefirst curve pattern 180-1 may be influenced by the aspect ratio of thefirst protruding portion 181 based on the diameter (D1) and the height(H1) of the first protruding portion 181. Herein, the aspect ratio(H/(D/2)) of the first protruding portions 181 may be defined as thevalue obtained by dividing the height (H1) of the first protrudingportion 181 by the radius (D1/2) of the bottom portion 181 a. The firstprotruding portions 181 of the first curve pattern 180-1 according tothe present disclosure may have the aspect ratio of 0.4˜0.6.

If the aspect ratio of the first protruding portions 181 is within therange of 0.4˜0.6, it is possible to improve the light-extractionefficiency in comparison to the case where the aspect ratio of the firstprotruding portions 181 is less than 0.4 or more than 0.6. That is, ifthe aspect ratio of the first protruding portions 181 is less than 0.4,the height (H1) of the first protruding portions 181 become too low sothat the light emitted from the emission device (ED) does not traveltoward the substrate 100, that is, the light is caught inside theemission device (ED), thereby lowering the light-extraction efficiency.Meanwhile, if the aspect ratio of the first protruding portions 181 ismore than 0.6, the height (H1) of the first protruding portions 181become too high so that the light reflectance is increased, therebylowering the light-extraction efficiency. Especially, if the aspectratio of the first protruding portions 181 is more than 0.6, it shows atendency of lowering the rise of current efficiency. However, if theaspect ratio of the first protruding portions 181 is within the range of0.4˜0.6, it has the maximum value in the rise of current efficiency ofthe emission device (ED). The aspect ratio of the first protrudingportions 181 may be within the range of 0.4˜0.6 so as to maximize thelight-extraction efficiency of the pixel.

If the aspect ratio of the first protruding portions 181 is within therange of 0.4˜0.60.6, on the basis of resolution of a mask for patterningthe first curve pattern 180-1, the diameter (D1) of the bottom portion181 a may be set to be 4˜12 micrometer (μm), and the height (H1) of thebottom portion 181 a may be set to be 0.8˜3.6 micrometer (μm). In thiscase, when the diameter (D1) of the bottom portion 181 a may be set to 4micrometer (μm), and the height (H1) of the first protruding portions181 may be set to 0.8 micrometer (μm), the aspect ratio of the firstprotruding portions 181 may be 0.4. Also, when the diameter (D1) of thebottom portion 181 a may be set to 12 μm, and the height (H1) of thefirst protruding portions 181 may be set to 3.6 micrometer (μm), theaspect ratio of the first protruding portions 181 may be 0.6.

If the height (H1) of the first protruding portions 181 is less than 0.8micrometer (μm), the height of the first protruding portions 181 becomestoo low so that the aspect ratio is reduced. Accordingly, the firstcurve pattern 180-1 is planarized so that the light emitted from theemission device (ED) is caught inside the emission device (ED), therebyreducing the light amount extracted toward the substrate 100. If theheight (H1) of the first protruding portions 181 is more than 3.6micrometer (μm), the height of the first protruding portions 181 becomestoo high so that the aspect ratio is increased, thereby lowering thecurrent efficiency rise, and increasing the reflectance.

If the diameter (D1) of the bottom portion 181 a of the first protrudingportions 181 is less than 4 micrometer (μm), it is difficult to controlthe patterning process. If the diameter (D1) of the bottom portion 181 aof the first protruding portions 181 is more than 12 micrometer (μm), itcauses the excess of the optimal height (H1) in the first protrudingportions 181, that is, 3.6 micrometer (μm), thereby loweringproductivity.

Additionally, the emission device (ED) deposited in the first protrudingportions 181 may have the maximum emission amount at its maximuminclination. Accordingly, if the emission device (ED) has the maximuminclination at the lateral portion 181 c or the inflection point portion(IPP) with respect to the bottom portion 181 a of the first protrudingportions 181, the light emitted from the emission device (ED) may travelat an angle which is smaller than the total-reflection critical angle,whereby the external emission efficiency is improved by amulti-reflection, to thereby realizing the maximum external lightextraction efficiency.

The inclination at the lateral portion 181 c or the inflection pointportion (IPP) of the first protruding portions 181 may be determined bya half-height aspect ratio (H1/F) to the aspect ratio of the firstprotruding portions 181. Herein, the half-height aspect ratio (H1/F)indicates the ratio of the height (H1) to the half-height width (F) ofthe first protruding portion 181, wherein the half-height width (F)indicates the width in the half (H1/2) of the height (H1).

If the aspect ratio of the first protruding portions 181 is within therange of 0.4˜0.6, the he half-height aspect ratio (H1/F) of the firstprotruding portions 181 may be within the range of 0.45˜0.7. Herein, ifthe half-height aspect ratio (H1/F) of the first protruding portions 181is less than 0.45, the height (H1) of the first protruding portionsbecome too low so that the light emitted from the emission device (ED)does not travel toward the substrate 100, that is, the light is caughtinside the emission device (ED), thereby lowering the light-extractionefficiency. Meanwhile, if the half-height aspect ratio (H1/F) of thefirst protruding portions 181 is more than 0.7, the height (H1) of thefirst protruding portions 181 become too high so that the lightreflectance is increased, thereby lowering the light-extractionefficiency.

In the first curve pattern 180-1 according to the present disclosure,the first protruding portions 181 have the aspect ratio of 0.4˜0.6 sothat the light-extraction efficiency may be improved in the first tothird pixels, and the first protruding portions 181 have the half-heightaspect ratio (H1/F) of 0.45˜0.7 so that it is possible to maximize thelight-extraction efficiency of the first to third pixels.

FIG. 7 is an enlarged view illustrating ‘B’ portion shown in FIG. 4,which illustrates a cross sectional structure of the second curvepattern and the emission device according to one aspect of the presentdisclosure.

Referring to FIG. 7 in connection with FIG. 4, the second curve pattern180-2 according to one aspect of the present disclosure includes theplurality of second protruding portions 185 and the plurality of secondrecess portions 187 prepared on the front surface 170 a of theplanarization coating layer 170 prepared on the insulating layer 130.

Each of the plurality of second protruding portions 185 may be formed inthe protruding shape on the insulating layer 130. Accordingly, theplurality of second protruding portions 185 may have the cross sectionalstructure of convex lens or micro lens shape.

Each of the plurality of second protruding portions 185 has the aspectratio (H2/(D2/2)) of 0.4˜0.6 so that the light-extraction efficiency ofthe fourth pixel is the same as the light-extraction efficiency of eachof the first to third pixels. In the same manner as the first protrudingportion 181, each of the plurality of second protruding portions 185includes a bottom portion 181 a, an apex portion 181 b and a lateralportion 181 c, whereby a detailed description for the same parts will beomitted. The plurality of second protruding portions 185 change thetraveling path of the incident light which is emitted from the emissiondevice (ED) to the substrate 100, to thereby improve thelight-extraction efficiency of the fourth pixel.

The plurality of second recess portions 187 are prepared at fixedintervals while being prepared in the recess shape from the frontsurface 170 a of the planarization coating layer 170. Except that abottom surface 187 a of each of the plurality of second recess portions187 is provided at a predetermined interval from the insulating layer130, the plurality of second recess portions 187 are identical in shapeto the plurality of first recess portions 183, whereby a detaileddescription for the plurality of second recess portions 187 will beomitted.

In the second curve pattern 180-2 according to the present disclosure,the second protruding portions 185 have the aspect ratio of 0.4˜0.6 sothat the light-extraction efficiency may be improved in the fourthpixel, and the second protruding portions 185 have the half-heightaspect ratio (H2/F) of 0.45˜0.7 so that it is possible to maximize thelight-extraction efficiency of the fourth pixel.

Eventually, in case of the light emitting display device according tothe present disclosure, the first curve pattern prepared in the emissionarea of each of the first to third pixels, and the second curve patternprepared in the emission area of the fourth pixel include the protrudingportions having the aspect ratio of 0.4˜0.6 so that it is possible toimprove the light-extraction efficiency in the respective pixelsconstituting the unit pixel, and furthermore, to maximize thelight-extraction efficiency in the respective pixels constituting theunit pixel.

FIGS. 8A to 8C illustrate a mask structure for forming the first curvepattern and the second curve pattern in the light emitting displaydevice according to the present disclosure.

First, referring to FIG. 8A, a first exposure mask 500 for forming thefirst curve pattern 180-1 and the second curve pattern 180-2 includes aplurality of first light transmitting portions 510 for transmitting theincident light through a first area 170 b of the planarization coatinglayer 170 to be provided with the first curve pattern 180-1, a pluralityof first light blocking portions 512 prepared between each of theplurality of first light transmitting portions 510, a plurality ofsecond light transmitting portions 530 for transmitting the incidentlight through a second area 170 c of the planarization coating layer 170to be provided with the second curve pattern 180-2, and a plurality ofsecond light blocking portions 532 prepared between each of theplurality of second light transmitting portions 530.

In the first exposure mask 500, a pitch (P1) of the first lighttransmitting portion 510 corresponding to a distance between centralpoints of the adjacent first light transmitting portions 510 is the sameas a pitch (P1) of the second light transmitting portion 530corresponding to a distance between central points of the adjacentsecond light transmitting portions 530, and a width (W1, or diameter) ineach of the plurality of first light transmitting portions 510 is thesame as a width (W1, or diameter) in each of the plurality of secondlight transmitting portions 530. Also, a width (G1, or gap) in each ofthe plurality of first light blocking portions 512 is the same as awidth (G1, or gap) in each of the plurality of second light blockingportions 532. The pitch (P1) and width (W1) of the first and secondlight transmitting portions 510 and 530 and the width (G1) of the firstand second light blocking portions 512 and 532 may be set within a rangecapable of spacing the bottom surface of the recess portion 183 of thefirst curve pattern to be provided with the planarization coating layer170 at a distance of 0.1 to 3 micrometer (μm) from the color filterlayer 150.

According as the photolithography process using the first exposure mask500 is carried out, the first and second curve patterns 180-1 and 180-2having the plurality of protruding portions and the plurality of recessportions are respectively formed in the first area 170 b and the secondarea 170 c of the planarization coating layer 170.

However, for an exposure process of the photolithography process, thesecond protruding portions 185 of the second curve pattern 180-2 areformed in the relatively thick second area 170 c of the planarizationcoating layer 170 due to the absence of the color filter layer 150,whereby the height (H0) in the second protruding portions 185 of thesecond curve pattern 180-2 is relatively lower than the height (H1) inthe first protruding portions 181 of the first curve pattern 180-1. Thatis, in case of the planarization coating layer 170, the second area 170c is formed on the insulating layer 130 which is not provided with thecolor filter layer 150, whereby a thickness (T4) of the second area 170c is relatively greater than a thickness (T3) of the first area 170 bformed on the color filter layer 150. Accordingly, the light irradiatedonto the second area 170 c for the exposure process is dispersed so thatthe height (H0) of the second protruding portions 185 formed in thesecond area 170 c is lower than the height (H1) of the first protrudingportions 181. Thus, the second protruding portions 185 may have theaspect ratio less than 0.4 due to the low height (H0). If the firstcurve pattern 180-1 and the second curve pattern 180-2 are formed on theplanarization coating layer 170 by the use of first exposure mask 500,the light-extraction efficiency in the fourth pixel is relatively lowerthan the light-extraction efficiency in the first to third pixels due tothe height difference (H1, H0) between the protruding portions 181 ofthe first curve pattern 180-1 and the protruding portions 185 of thesecond curve pattern 180-2.

Next, referring to FIG. 8B, a second exposure mask 600 for forming thefirst curve pattern 180-1 and the second curve pattern 180-2 may includefirst light transmitting portions 610, first light blocking portions612, second light transmitting portions 630 and second light blockingportions 632, in the same manner as the first exposure mask 500.However, the first light transmitting portions 610 and the secondtransmitting portions 630 have the different pitches (P1, P2) from eachother.

In the second exposure mask 600 according to one aspect of the presentdisclosure, the second pitch (P2) in the second light transmittingportions 630 is larger than the first pitch (P1) in the first lighttransmitting portions 610. To this end, a second width (W2, or diameter)in the second light transmitting portions 630 is larger than a firstwidth (W1, or diameter) in the first light transmitting portions 610,and a second width (G2, or gap) in the second light blocking portions632 is the same as a first width (G1, or gap) in the first lightblocking portions 612. That is, in comparison to the first exposure mask500, the second width (W2, or diameter) of the second light transmittingportions 630 in the second exposure mask 600 is increased so that thesecond pitch (P2) of the second light transmitting portions 630 in thesecond exposure mask 600 may be increased. The second width (W2, ordiameter) of the second light transmitting portions 630 is set withinthe range capable of obtaining the same aspect ratio and the samehalf-height aspect ratio both in the first protruding portions 181 andthe second protruding portions 185 formed in the second area 170 c ofthe planarization coating layer 170. That is, the second width (W2, ordiameter) of the second light transmitting portions 630 is set withinthe range enabling the aspect ratio of 0.4˜0.6 in the second protrudingportions 185, and enabling the half-height aspect ratio of 0.45˜0.7 inthe second protruding portions 185.

In case of the second exposure mask 600 according to another aspect ofthe present disclosure, as shown in FIG. 8C, the second pitch (P2) ofthe second light transmitting portions 630 may be larger than the firstpitch (P1) of the first light transmitting portions 610 by increasingthe second width (G2, or gap) of the second light blocking portions 632instead of the second width (W2, or diameter) of the second lighttransmitting portions 630. That is, the second width (G2, or gap) of thesecond light blocking portions 632 is larger than the first width (G1,or gap) of the first light blocking portions 612, and the second width(W1, or diameter) of the second light transmitting portions 630 is thesame as the first width (W1, or diameter) of the first lighttransmitting portions 610. That is, in comparison to the first exposuremask 500, the second width (G2, or diameter) of the second lightblocking portions 632 in the second exposure mask 600 is increased sothat the second pitch (P2) of the second light transmitting portions 630in the second exposure mask 600 may be increased. The second width (G2,or diameter) of the second light blocking portions 632 is set within therange capable of obtaining the same aspect ratio and the samehalf-height aspect ratio both in the first protruding portions 181 andthe second protruding portions 185 formed in the second area 170 c ofthe planarization coating layer 170. That is, the second width (G2, ordiameter) of the second light blocking portions 632 is set within therange enabling the aspect ratio of 0.4˜0.6 in the second protrudingportions 185, and enabling the half-height aspect ratio of 0.45˜0.7 inthe second protruding portions 185.

In the second exposure mask 600, the second pitch (P2) of the secondlight transmitting portions 630 is larger than the first pitch (P1) ofthe first light transmitting portion 610 so that the aspect ratio of thesecond protruding portions 185 may be the same the aspect ratio of thefirst protruding portions 181, and furthermore, the half-height aspectratio of the second protruding portions 185 may be the same thehalf-height aspect ratio of the first protruding portions 181.

If the first curve pattern 180-1 and the second curve pattern 180-2 areformed on the planarization coating layer 170 by the use of secondexposure mask 600, the protruding portions 181 of the first curvepattern 180-1 and the protruding portions 185 of the second curvepattern 180-2 may have the aspect ratio of 0.4˜0.6, and may have thehalf-height aspect ratio of 0.45˜0.7 so that it is possible touniformity of the light-extraction efficiency in the first to thirdpixels and the fourth pixel.

FIG. 9 is a cross-sectional view illustrating a structure of the firstto third pixels shown in FIG. 1. FIG. 10 is a cross sectional viewillustrating a structure of the fourth pixel shown in FIG. 1, which isobtained by additionally providing a barrier layer to the light emittingdisplay device shown in FIGS. 1 to 7. Hereinafter, a detaileddescription for the same parts except the barrier layer and relatedstructures will be omitted.

Referring to FIGS. 9 and 10, the barrier layer 160 according to theaspect of the present disclosure is prepared on the substrate 100 so asto cover the color filter layer 150 and the insulating layer 130. Thatis, the barrier layer 160 is prepared between the planarization coatinglayer 170 and the color filter layer 150, and between the planarizationcoating layer 170 and the insulating layer 130. For the process offorming the first and second curve patterns 180-1 and 180-2 in theplanarization coating layer 170 overlapping the emission area (EA) ofeach pixel, the barrier layer 160 functions as an etching stopper sothat it is possible to prevent the color filter layer 150 from beingdirectly exposed to the first recess portion 183, to therebyfundamentally prevent the problem caused by the exposure of the colorfilter layer 150.

The barrier layer 160 according to one aspect of the present disclosuremay have a thickness of 0.1 to 3 micrometer (μm). Herein, if thethickness of the barrier layer 160 is less than 0.1 micrometer (μm),particles contained in the color filter layer 150 penetrate through thebarrier layer 160, whereby the emission device (ED) may be damaged bythe particles of the color filter layer 150. Also, according as thethickness of the barrier layer 160 is increased, it is favorable forpreventing the exposure of the color filter layer 150. However, inaspect of the manufacturing process, a material cost of the barrierlayer 160 is increased, a manufacturing time is increased, and athickness of the light emitting display device is also increased. Inthis reason, the thickness of the barrier layer 160 may be less than 3micrometer (μm). For example, if the particle of the color filter layer150 has a size less than 0.1 micrometer (μm), the barrier layer 160 maybe formed at a thickness of at least 0.1 micrometer (μum).

The barrier layer 160 according to one aspect of the present disclosuremay be formed of a material which is not removed by a developingmaterial (or etching material) used for the process of patterning theplanarization coating layer 170.

The barrier layer 160 according to another aspect of the presentdisclosure may be formed of an inorganic material such as silicon oxide(SiO_(x)) or silicon nitride (SiN_(x)). That is, the barrier layer 160may be formed of the same material as that of the insulating layer 130.For example, the barrier layer 160 and the insulating layer 130 may beformed of SiO₂.

After forming the first and second curve patterns 180-1 and 180-2, aprocess for forming the contact hole (CH) so as to expose some of thesource electrode 119 s of the driving thin film transistor (DT) may becarried out. If the barrier layer 160 and the insulating layer 130 areformed of the same material, in consideration of the process for formingthe contact hole (CH), the contact hole (CH) may be formed in thebarrier layer 160 and the insulating layer 130 at the same time by onepatterning process. For the simplified manufacturing process of thelight emitting display device, the barrier layer 160 and the insulatinglayer 130 may be formed of the same material.

The light emitting display device according to the aspect of the presentdisclosure facilitates to maximize the light-extraction efficiency ofthe respective pixels constituting the unit pixel, to prevent the colorfilter layer 150 from being directly exposed to the first recess portion183 by the barrier layer 160 functioning as the etching stopper betweenthe first curve pattern 180-1 and the color filter layer 150, and toprevent deterioration of the characteristics of the emission device (ED)caused by the exposure of the color filter layer 150.

According to the present disclosure, the light-extraction efficiency ofthe pixels prepared in the light emitting display device can beimproved, thereby maximizing the light-extraction efficiency in eachpixel.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the present disclosurewithout departing from the spirit or scope of the disclosure. Thus, itis intended that the present disclosure covers the modifications andvariations of this disclosure provided they come within the scope of theappended claims and their equivalents.

What is claimed is:
 1. A light emitting display device comprising: asubstrate having a first area and a second area; a coating layerdisposed on the substrate and having a plurality of protruding portionsin each of the first area and the second area; and an emission elementdisposed on the plurality of protruding portions, wherein a pitch ofprotruding portions disposed in the first area is different from a pitchof the protruding portions disposed in the second area.
 2. The lightemitting display device of claim 1, wherein a thickness of the coatinglayer vertically overlapping the first area is different from athickness of the coating layer vertically overlapping the second area.3. The light emitting display device of claim 1, wherein the pitch ofprotruding portions disposed in the first area is greater than the pitchof the protruding portions disposed in the second area.
 4. The lightemitting display device of claim 1, further comprising: red, green andblue subpixels at the first area; and a white subpixel at the secondarea.
 5. The light emitting display device of claim 4, wherein the pitchof protruding portions disposed in the white subpixel is different fromthe pitch of the protruding portions disposed in at least one subpixelof the red, green and blue subpixels.
 6. The light emitting displaydevice of claim 1, wherein the plurality of protruding portions includesa bottom portion adjacent to the substrate, and an apex portion disposedat a predetermined height from the bottom portion, and wherein athickness of the emission element disposed between the bottom portionand the apex portion of each of the plurality of protruding portions isless than a thickness of the emission element disposed between thebottom portion and/or the apex portion of each of the plurality ofprotruding portions.
 7. The light emitting display device of claim 1,wherein the plurality of protruding portions includes a bottom portionadjacent to the substrate, and an apex portion disposed at apredetermined height from the bottom portion, and wherein a luminance ofthe emission element disposed on the apex portion of each of theplurality of protruding portions is greater than a luminance of theemission element disposed on the bottom portion of each of the pluralityof protruding portions.
 8. The light emitting display device of claim 1,further comprising a color filter layer disposed at the first areabetween the substrate and the plurality of protruding portions, an endof the color filter layer extends pass thought an end of an areaoverlapping the plurality of protruding portions.
 9. The light emittingdisplay device of claim 1, further comprising a plurality of recessportions surrounded by the plurality of protruding portions, and whereinthe plurality of recess portions are arranged in a line along a firstdirection and a zigzag type along a second direction.
 10. The lightemitting display device of claim 1, further comprising a plurality ofrecess portions surrounded by the plurality of protruding portions, andwherein the plurality of protruding portions has a honeycomb structureor a hexagonal shape in plan view.
 11. A light emitting display devicecomprising: a substrate; a pixel disposed on the substrate and includinga plurality of subpixels; a coating layer disposed on the substrate andhaving a plurality of protruding portions in each of the plurality ofsubpixels; and an emission element disposed on the plurality ofprotruding portions, wherein a pitch of protruding portions disposed inat least one subpixel of the plurality of subpixels is different from apitch of the protruding portions disposed in the adjacent subpixels. 12.The light emitting display device of claim 11, wherein the pitch ofprotruding portions disposed in at least one subpixel of the pluralityof subpixels is greater than the pitch of the protruding portionsdisposed in the adjacent subpixels.
 13. The light emitting displaydevice of claim 11, wherein the pixel comprise a red subpixel, a greensubpixel, a blue subpixel, and a white subpixel, and wherein the pitchof protruding portions disposed in the white subpixel is different fromthe pitch of the protruding portions disposed in at least one subpixelof the red, green and blue subpixels.
 14. The light emitting displaydevice of claim 11, wherein the pixel comprise a red subpixel, a greensubpixel, a blue subpixel, and a white subpixel, and wherein the pitchof protruding portions disposed in the white subpixel is greater thanthe pitch of the protruding portions disposed in at least one subpixelof the red, green and blue subpixels.
 15. The light emitting displaydevice of claim 11, wherein the pixel comprise a red subpixel, a greensubpixel, a blue subpixel, and a white subpixel, and wherein a thicknessof the coating layer disposed on the white subpixel is different from athickness of the coating layer disposed on at least one subpixel of thered, green and blue subpixels.
 16. The light emitting display device ofclaim 11, wherein the plurality of protruding portions includes a bottomportion adjacent to the substrate, and an apex portion disposed at apredetermined height from the bottom portion, and wherein a thickness ofthe emission element disposed between the bottom portion and the apexportion of each of the plurality of protruding portions is less than athickness of the emission element disposed between the bottom portionand/or the apex portion of each of the plurality of protruding portions.17. The light emitting display device of claim 11, wherein the pluralityof protruding portions includes a bottom portion adjacent to thesubstrate, and an apex portion disposed at a predetermined height fromthe bottom portion, and wherein a luminance of the emission elementdisposed on the apex portion of each of the plurality of protrudingportions is greater than a luminance of the emission element disposed onthe bottom portion of each of the plurality of protruding portions. 18.The light emitting display device of claim 11, further comprising acolor filter layer disposed at the first area between the substrate andthe plurality of protruding portions, an end of the color filter layerextends pass thought an end of an area overlapping the plurality ofprotruding portions.
 19. The light emitting display device of claim 11,further comprising a plurality of recess portions surrounded by theplurality of protruding portions, and wherein the plurality of recessportions are arranged in a line along a first direction and a zigzagtype along a second direction.
 20. The light emitting display device ofclaim 11, further comprising a plurality of recess portions surroundedby the plurality of protruding portions, and wherein the plurality ofprotruding portions has a honeycomb structure or a hexagonal shape inplan view.